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APT60M60JFLL 600V 70A 0.060 POWER MOS 7 (R) R FREDFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE SO ISOTOP (R) 2 T- 27 "UL Recognized" D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT60M60JFLL UNIT Volts Amps 600 70 280 30 40 694 5.56 -55 to 150 300 70 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.060 250 1000 100 3 5 (VGS = 10V, 35A) Ohms A nA Volts 11-2003 050-7092 Rev A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT60M60JFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 70A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 70A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 70A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 70A, RG = 5 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 12630 2202 157 289 74 146 21 16 51 12 1428 1386 2058 1691 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 70 280 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -70A) 5 dv/ t rr Reverse Recovery Time (IS = -70A, di/dt = 100A/s) Reverse Recovery Charge (IS = -70A, di/dt = 100A/s) Peak Recovery Current (IS = -70A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 300 600 1.8 7.4 16 30 TYP MAX Q rr IRRM C Amps THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 1.47mH, RG = 25, Peak IL = 70A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -70A di/dt 700A/s VR 600 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 10-3 SINGLE PULSE 10-2 10-1 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 11-2003 050-7092 Rev A Z JC 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 200 ID, DRAIN CURRENT (AMPERES) Junction temp. (C) RC MODEL APT60M60JFLL 180 160 140 5.5V 120 100 80 60 40 4.5V 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO V = 10V @ 35A GS VGS =15 & 10V 6.5V 6V 0.0244 0.0731F Power (watts) 0.133 0.701F 5V 0.0218 Case temperature. (C) 20.1F 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 1.30 1.20 VGS=10V 1.10 150 TJ = -55C 100 1.00 VGS=20V 50 TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0.90 0.80 0 0 40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 70 60 50 40 30 20 10 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I V D 1.15 ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 = 35A = 10V GS 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 1.5 0.9 11-2003 050-7092 Rev A 1.0 0.8 0.5 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT60M60JFLL 280 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 40,000 100S 10,000 C, CAPACITANCE (pF) 100 50 Ciss 1mS 10 5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I D Coss 1,000 10mS 1 = 70A IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300 100 Crss 100 TJ =+150C TJ =+25C 12 VDS= 120V VDS= 300V VDS= 480V 8 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 250 td(off) 200 td(on) and td(off) (ns) 0 0 50 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 V DD G 1 = 400V 120 100 R = 5 T = 125C J L = 100H V DD G = 400V tf 150 R = 5 tr and tf (ns) T = 125C J 80 60 40 L = 100H 100 50 td(on) 20 0 tr 0 0 60 80 100 120 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 20 40 60 80 100 120 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V I DD 0 20 40 4000 3500 SWITCHING ENERGY (J) = 400V = 400V R = 5 D J = 70A T = 125C J SWITCHING ENERGY (J) 3000 2500 2000 1500 1000 500 0 L = 100H E ON includes diode reverse recovery. 8000 T = 125C L = 100H EON includes diode reverse recovery. Eoff 6000 Eon 4000 Eon 11-2003 Eoff 2000 050-7092 Rev A 0 0 20 40 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 60 80 100 120 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT Typical Performance Curves Gate Voltage APT60M60JFLL 10 % T = 125 C J 90% Gate Voltage Drain Voltage T = 125 C J td(on) Drain Current td(off) 90% 90% tr 5% 5% Switching Energy tf Drain Voltage Switching Energy 10 % 10% Drain Current 0 Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7092 Rev A 11-2003 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) |
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